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Photoluminescence of InxGa1-xAs-GaAs strained-layer superlattices

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Abstract

Photoluminescence of InxGa1-xAs-GaAs strained-layer superlattices (SLS's) grown by molecular beam epitaxy (MBE) is investigated. Highly strained SLS's composed of layers differing in their bulk lattice constants by as much as 2.7% are examined over the temperature range 20K-300K. Photoluminescence (PL) spectra for several In0.28Ga0.72AsGaAs SLS's are presented, providing data relating effective band gap and PL intensity to temperature and layer thickness. These data suggest a critical (maximum) alloy layer thickness for optical quality material in the range of 80å-100å for crystals with x = 0.28 and an InxGa1-xAs/GaAs layer thickness ratio of Lz/LB = 1.3. Results of PL experiments on In0.38Ga0 62As-GaAs SLS's are also presented, and the effects of lattice misfit at the SLS/substrate interface upon the optical quality of these SLS's is examined.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, North Carolina State University, 27695-7911, Raleigh, N.C.

    N. G. Anderson, W. D. Laidig & Y. F. Lin

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  1. N. G. Anderson
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  2. W. D. Laidig
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  3. Y. F. Lin
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Anderson, N.G., Laidig, W.D. & Lin, Y.F. Photoluminescence of InxGa1-xAs-GaAs strained-layer superlattices. J. Electron. Mater. 14, 187–202 (1985). https://doi.org/10.1007/BF02656675

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  • DOI: https://doi.org/10.1007/BF02656675

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