Abstract
3-9 MeV electrons were used to introduce impurity Ge atoms into Si wafers from Ge sheets, which are in contact with a Si surface at 20-60‡C in water bath. Concentration-dependent diffusivities of ∼10-18-10-14 cm2sec-1 for Ge in Si were measured. Activation energies of sputtering yield for Ge and of the diffusivity of Ge in Si are estimated to be ∼0.3 eV and ∼0.58 eV, respectively. In a case of hot (∼250‡C) irradiation in ∼1x10-3 Torr vacuum, also the similar concentration profiles of impurity atoms in the substrates were observed.
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Wada, T., Takeda, M. & Yasuda, K. Electron-beam doping-electron radiation effects in impurity overlayers and semiconductor substrates. J. Electron. Mater. 14, 171–186 (1985). https://doi.org/10.1007/BF02656674
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DOI: https://doi.org/10.1007/BF02656674