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Sputtered hydrogenated amorphous silicon

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Abstract

Hydrogenated a-Si, whose properties can be modified by impurity doping, can be produced either by decomposition of silane or by reactive sputtering of Si in an argon-hydrogen plasma. This article reviews advances made during the past few years in the preparation and characterization of films produced by the second method. The basic deposition conditions are summarized. The conclusions of analytical studies (photo-emission, infrared spectroscopy, and volumetric measurements of evolved gases), regarding the amount of hydrogen and its bonding configuration in the network, are outlined. The optical, carrier transport, photoconductivity and photoluminescence properties as a function of hydrogen content and doping are described. Electron drift mobilities, deduced from steady state and transient photoconductivity are presented. The transport and recombination properties are discussed with existing models of amorphous semiconductors, and are found to be consistent with atomic relaxations, i.e. polaronic effects.

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  1. Exxon Research and Engineering Company, 07036, Linden, New Jersey

    T. D. Moustakas

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Moustakas, T.D. Sputtered hydrogenated amorphous silicon. J. Electron. Mater. 8, 391–435 (1979). https://doi.org/10.1007/BF02655635

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