Abstract
Selenium doped Ga0.51In0.49P films have been grown by metalorganic chemical vapour deposition at 600, 670 and 740° C. The extent of ordering of the Group III sublattice has been monitored by transmission electron microscopy. Ordering disappears at carrier concentrations on the order of 1018 cm−3 for samples grown at 600 and 740° C although a small degree of ordering persists in the samples grown at 670° C up to a carrier concentration of 1019 cm−3. At each growth temperature, the ordering observed decreased and the bandgap measured increased with increasing Se doping.
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Goral, J.P., Kurtz, S.R., Olson, J.M. et al. Transmission electron microscopy study of the effect of selenium doping on the ordering of GalnP2 . J. Electron. Mater. 19, 95–99 (1990). https://doi.org/10.1007/BF02655555
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DOI: https://doi.org/10.1007/BF02655555