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Rapid thermal annealing of ion implanted cdte

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Abstract

Rapid thermal annealing of ion implantedn-type CdTe has been investigated. Samples were implanted with 60 keV Ar+ and As+ ions to a dose of 1 × 1014 cm−2 and subjected to anneal sequences of 5-100s at temperatures of 350-650° C. Photoluminescence measurements have indicated that the implantation completely quenches the photoluminescence; however, anneals for only 5s at 350° C are sufficient to recover most of the features of the photoluminescence spectrum to that equivalent of unimplanted material. Luminescence spectral features associated with thermal annealing damage and substitutional As in inferred. Type conversion of the As+ implanted layer is observed and it has been shown that good diodes can be made, with the best behaviour resulting from a 5s anneal at 450° C.

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Authors and Affiliations

  1. Department of Engineering Physics, McMaster University, L8S 4M1, Hamilton, Ontario, Canada

    S. G. Meikle & D. A. Thompson

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  1. S. G. Meikle
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  2. D. A. Thompson
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Research supported by the Natural Sciences and Engineering Research Council of Canada

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Meikle, S.G., Thompson, D.A. Rapid thermal annealing of ion implanted cdte. J. Electron. Mater. 16, 157–161 (1987). https://doi.org/10.1007/BF02655480

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  • DOI: https://doi.org/10.1007/BF02655480

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