A Rapid method for determining the precision of orientation of ii-vi and ill-v single crystal substrates

Abstract

A modification of the x-ray back reflection Laue technique has been devised for establishing the precision of orientation of single crystals of certain electronic materials. The technique utilizes a broad, slightly divergent x-ray beam with known characteristic wavelengths present. In this way broad Laue spots are obtained with superimposed arcs of higher intensity present. These arcs result from the characteristic wavelength and of the divergent beam satisfying the Bragg equation for specific planes. The relative positions of the arcs with respect to the main Laue spot are particularly sensitive to mis-orientation. The technique/is especially useful for substrate materials such as CdTe [111 ] and GaAs [001 ] and can determine misorientations to a precision better than 6' of arc.