Abstract
The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (<50 nm) CoSi2 preparation. A comparison of the plan-view and cross-section TEM micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm−2) produces homogeneous silicide with smooth silicide-to-silicon interface.
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References
S.P. Murarka,Silicides for VLSI Application (New York: Academic Press, 1983).
M.A. Nicolet and S.S. Lau,VLSI Electronics, ed. N.G. Einspruch and G.M. Larrabe (New York: Academic, 1983), p. 330.
H.K. Park, J. Sachitano, G. Eiden, E. Lane and T. Yamaguchi,J. Vac. Sci. Technol. A 2, 259 (1984).
L. Van den Hove, R. Wolters, K. Maex, R.F. de Keersmaecker and G.L. Declerk,IEEE Trans. Electron Devices, ED-84, 554 (1987).
M. Tabasky, E.S. Bulat, B.M. Ditchek, M.A. Sullivan and S.C. Shatas,IEEE Trans. Electron. Dev. ED-84, 548 (1987).
T. Maeda, T. Nakamura, S. Shima and J. Matsunga,IEEE Trans. Electron. Dev., ED-34, 599 (1987).
R.E. Jones, B.Z. Li, K Daneshuar and J. Davis,J. Appl. Phys. 56, 3465 (1984).
C.D. Lien, M. Bartur and M.A. Nicolet,Mater. Res. Soc. Symp. Proc. 25, (1984), p. 51.
Y.H. Ku, S.K. Lee and D.L. Kwong,J.Electrochem Soc. 137, 728 (1990).
I. Kasko, C. Dehm and H. Ryssel,Mat. Res. Soc. Symp. Proc. 268, (1992), p. 289.
D.L. Kwong, Y.H. Ku, S.K. Lee, E. Louis, N.S. Alvi and P. Chu,J. Appl. Phys. 61, 5084 (1987).
A.H. Hamdi and M.A. Nicolet,Thin Solid Films 119, 357 (1984).
Y.H. Ku, S.K. Lee, D.L. Kwong, C.O. Lee and J.R. Yeargain,IEEE Electron Dev. Lett. EDL-9, 293 (1988).
J. Phillips, P. Revesz, J.O. Olowolafe and J.W. Mayer,Mat. Res. Soc. Symp. Proc. 182, (1990), p. 57.
Z.G. Xiao, G.A. Rozgonyi, C.A. Canovi and C.M. Osburn,J. Mater. Res. 7, 269 (1992).
V. Probst, P. Lippcns, L. Van den Hove, K. Maex, H. Schaber and R. De Keersmaecker,Proc. 17th ESSDERC 437, Bologna, Italy (1987).
C. Dehm, J. Gyulai and H. Ryssel,Appl. Phys. Lett. 60 (10) (1992).
G. Valyi, H. Ryssel, O. Ganschow and R. Jede,Applications of Surface Sci. 38, 235 (1989).
I. Kasko, C. Dehm, L. Frey and H. Ryssel,Nucl. Instr. Methods in Phys. Research B80/81, 786 (1993).
J.W. Mayer, B.Y. Tsaur, S.S. Lau and L.H. Hung,Nucl. Instr. Methods 182/183, 1 (1981).
S.S. Lau, B.X. Liu and M.A. Nicolet,Nucl. Instr. Methods 209/ 210, 97 (1983).
E. Nagasawa, H. Okabayashy and M. Morimoto,/IEEE Trans. Electron. Dev. ED-34, 581 (1987).
J.P. Biersack, S. Berg and C. Nender,Nucl. Instrum. and Methods B59/60, 21 (1991).
A.H. Van Ommen, C.W.T. Bulle-Lieuwma, J.J.M. Ottenheim and A.M.L. Theunissen,J. Appl. Phys. 67, 1767 (1990).
W.P. Maszara,Appl. Phys. Lett. 62 (9), 961 (1993).
W.P. Maszara,J. Appl. Phys. 71, 1284 (1992).
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Kal, S., Kasko, I. & Ryssel, H. Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing. J. Electron. Mater. 24, 1349–1355 (1995). https://doi.org/10.1007/BF02655447
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DOI: https://doi.org/10.1007/BF02655447