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Prevention of thermal surface damage in GaAs by encapsulated annealing in an arsine ambient

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Abstract

This paper shows that both capped and capless techniques commonly used in the high temperature annealing of GaAs can cause thermal surface damage characterized by a decrease in the net carrier concentration in a region within a few micrometers of the surface. This thermal surface damage can be prevented by a technique of encapsulated annealing in an arsine ambient.

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Author notes

  1. P. M. Campbell

    Present address: Naval Research Laboratory, 20375, Washington, DC

  2. O. Aina

    Present address: Allied/Bendix Aerospace Technology Center, 21045, Columbia, MD

Authors and Affiliations

  1. Corporate Research and Development Center, General Electric Company, 12345, Schenectady, NY

    P. M. Campbell, O. Aina & B. J. Baliga

Authors
  1. P. M. Campbell
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  2. O. Aina
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  3. B. J. Baliga
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Campbell, P.M., Aina, O. & Baliga, B.J. Prevention of thermal surface damage in GaAs by encapsulated annealing in an arsine ambient. J. Electron. Mater. 15, 125–131 (1986). https://doi.org/10.1007/BF02655325

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  • DOI: https://doi.org/10.1007/BF02655325

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