Skip to main content
SpringerLink
Log in

Adjusting trimethylgallium injection time to explore atomic layer epitaxy of GaAs between 425 and 500°C by organometallic vapor phase epitaxy

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

In experiments employing a conventional low-pressure, rotating-disk organome-tallic vapor phase epitaxy reactor, GaAs epilayers have been grown at substrate temperatures ranging from 425 to 500°C by exposing the substrate alternately to trimethylgallium (TMG) and AsH3.The GaAs growth rateR was approximately constant with TMG flow rate, but with increasing TMG injection timet, it increased to more than one monolayer per TMG/AsH3 cycle without saturating. Although growth was not self-limiting, for one specific combination of temperature andt, a value of R = 1 monolayer/cycle could be achieved by usingt values decreasing from 10.8 s at 425°C to 0.9 s at 500°C in accordance with an Arrhenius relationship between 1/t and absolute temperature.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M. Ahonen, M. Pessa and T. Suntola,Thin Solid Films 65, 301 (1980).

    Article  CAS  Google Scholar 

  2. J. Nishizawa, H. Abe and T. Kurabayashi,J. Electrochem. Soc. 132, 1197 (1985).

    Article  CAS  Google Scholar 

  3. M.A. Tischler, N.G. Anderson, R.M. Kolbas and S.M. Bedair,Appl. Phys. Lett. 50, 1266 (1987).

    Article  CAS  Google Scholar 

  4. S.P. DenBaars, P.D. Dapkus, C.A. Beyler, A. Hariz and K.M. Dzurko,J. Cryst. Growth 93, 195 (1988).

    Article  CAS  Google Scholar 

  5. H. Ohno, S. Ohtsuka, A. Ohuchi, T. Matsubara and H. Hasegawa,J. Cryst. Growth 93, 342 (1988).

    Article  CAS  Google Scholar 

  6. S.P. DenBaars, C.A. Beyler, A. Hariz and P.D. Dapkus,Appl. Phys. Lett. 51, 1530 (1987).

    Article  CAS  Google Scholar 

  7. M. Hashemi, J. Ramdani, B.T. McDermott, K. Reid and S. M. Bedair,Appl. Phys. Lett. 56, 964 (1990).

    Article  CAS  Google Scholar 

  8. Y. Ide, B.T. McDermott, M. Hashemi,S.M. Bedair and W.D. Goodhue,Appl. Phys. Lett. 53, 2314 (1988).

    Article  CAS  Google Scholar 

  9. D.B. Gladden, W.D. Goodhue, C.A. Wang and G.A. Lincoln,J. Electron. Mater. 21, 109 (1992).

    CAS  Google Scholar 

  10. N.H. Karam, V.E. Haven, S.M. Vernon, J.C. Tran and N.A. ElMasry, Mater. Res. Soc. 145, 331 (1989).

    CAS  Google Scholar 

  11. M. Ozeki, K. Mochizuki, N. Ohtsuka and K. Kodama,Appl. Phys. Lett. 53, 1509 (1988).

    Article  CAS  Google Scholar 

  12. KG. Reid, H.M. Urdianyk and S.M. Bedair,Appl. Phys. Lett. 59, 2397 (1991).

    Article  CAS  Google Scholar 

  13. H. Yokoyama, M. Shinohara and N. Inoue,Appl. Phys. Lett. 59, 2148 (1991).

    Article  CAS  Google Scholar 

  14. C.A. Wang, S. Patnaik, J.W. Caunt and R.A. Brown,J. Cryst. Growth 93, 228 (1988).

    Article  CAS  Google Scholar 

  15. W.G. Jeong, E.P. Menu and P.D. Dapkus,Appl. Phys. Lett. 55, 244 (1989).

    Article  CAS  Google Scholar 

  16. P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong and S.P. DenBaars,J. Cryst.Growth 107, 73 (1991).

    Article  CAS  Google Scholar 

  17. D.H. Reep and S.K. Ghandi,J. Electrochem. Soc. 130, 675 (1983).

    Article  CAS  Google Scholar 

  18. C.W. Krueger, unpublished data.

  19. M.G. Jacko and S.J.W. Price,Can. J. Chem. 41, 1560 (1963).

    Article  CAS  Google Scholar 

  20. D.E. Aspnes, E. Colas, A.A. Studna, R. Bhat, M.A. Koza and V.G. Keramidas,Phys. Rev. Lett. 61, 2782 (1988).

    Article  CAS  Google Scholar 

  21. U. Memmert and M.L. Yu,Appl. Phys. Lett. 56, 1883 (1990).

    Article  CAS  Google Scholar 

  22. J.R. Creighton, KR. Lykke, V.A. Shamamian and B.D. Kay,Appl. Phys. Lett. 57, 279 (1990).

    Article  CAS  Google Scholar 

  23. T. J. Mountziaris and K.F. Jensen,J. Electrochem. Soc. 138, 2426 (1991).

    Article  CAS  Google Scholar 

  24. C.A. Larsen, N.I. Buchan, S.H. Li and G.B. Stringfcllow,J. Cryst. Growth 102, 103 (1990).

    Article  CAS  Google Scholar 

  25. W. Tsang and R.F. Hampson,J. Phys. Chem. Ref. Data 15, 1087 (1986).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Lincoln Laboratory, Massachusetts Institute of Technology, 02173-9108, Lexington, MA

    C. A. Wang & D. M. Tracy

Authors
  1. C. A. Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. D. M. Tracy
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Wang, C.A., Tracy, D.M. Adjusting trimethylgallium injection time to explore atomic layer epitaxy of GaAs between 425 and 500°C by organometallic vapor phase epitaxy. J. Electron. Mater. 23, 185–189 (1994). https://doi.org/10.1007/BF02655267

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02655267

Keywords

Search

Navigation