Abstract
Thin films of InSb have been grown on insulating GaAs substrates using the metalorganic chemical vapor deposition technique with trimethyl indium and trimethyl antimony as reactants. We find that the mobilities obtained are usually low unless indium is predeposited onto the substrate. This indium predeposition technique greatly improves the yield of InSb films with mobilities of ~50000 crn2V−1S−1 at room temperature and a typical thickness of 2 microns. With this predeposition technique, the electron mobilities of these films become relatively independent of the vapor stroichiometry during growth and of the growth temperature. The electron mobilities are also very uniform across a wafer. These properties are obtained even when the film growth rate exceeds 2 μm/h.
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D.L. Partin, J. Heremans, C.M. Thrush and L. Green,Digest of IEEE 1992 Solid-State Sensor and Actuator Workshop, June 21, 1992, Hilton Head Island, SC.
J. Heremans, D.L. Partin, C.M. Thrush and L. Green,Semiconductor Sci. and Tech., to be published.
S. Takaoka, “Recent Development of Magnetoresistive Devices and Applications,”Circulars of Electrotechnical Laboratory No. 182, Tokyo (1974).
J. Heremans, D.L. Partin, D.T. Morelli, B.K. Fuller andC.M. Thrush,Appl. Phys. Lett. 57, 291 (1990).
K.S. ChandraSekhar, A.K. Ballal, L. Salamanca-Riba and D.L. Partin,Mat. Res. Soc. Symp. Proc. 263, 79 (1992).
D.L. Partin, L. Green, D.T. Morelli, J.P. Heremans,B.K. Fuller and C.M. Thrush,J. Electron. Mater. 20, 1109 (1991).
R.M. Biefeld and G.M. Hebner,J. Cryst. Growth 109, 272 (1991).
R.M. Biefeld and R.W. Gedridge, Jr.,J. Cryst. Growth 124, 150 (1992).
R.M. Graham, N.J. Mason, P.J. Walker, D.M. Frigo andR.W. Gedridge, Jr.,J. Cryst. Growth 124, 363 (1992).
C.H. Chen, K.T. Huang, D.L. Drobeck and G.B. Stringfellow,J. Cryst. Growth 124, 142 (1992).
M Behet, B. Stoll, W. Brysch and K. Heime,J. Cryst. Growth 124, 377 (1992).
M.H. McKee, B.S. Yoo and R.A. Stall,J. Cryst. Growth 124, 286 (1992).
Model GS 3200, Emcore Corp., 35 Elizabeth Ave., Somerset, NJ 08873.
CVD Metalorganics Vapor Pressure Data Chart, Morton International, Danvers, MA.
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Partin, D.L., Green, L. & Heremans, J. Growth of high mobility InSb by metalorganic chemical vapor deposition. J. Electron. Mater. 23, 75–79 (1994). https://doi.org/10.1007/BF02655249
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DOI: https://doi.org/10.1007/BF02655249