Abstract
Silicon wafers were steam oxidized at temperatures of 550–1000°C and pressures of 0.05–8 atm with H2 16O, H2 18O, and D2 16O. Deuterium (D) and18O profiles in 100–200 nm thick oxide films were measured with Cs+ beam secondary ion mass spectroscopy (SIMS). The use of D and18O isotopes enabled analysis of these elements without interference from the sputtering ambient. Peaks in the D profiles near the interface are due predominantly to abrupt changes in the ion yield and charging conditions as the interface is approached. Although the D concentration is nearly constant at ∼ 1 × 1020 cm−3 for 700–1000°C oxidations, it rises to a non-equilibrium value of 6 × 1020 cm−3 at 600°C. Analysis of steam indiffusions below 800°C indicates that the OD concentration is proportional to the (steam pressure)1/2, in agreement with earlier results on as-oxidized wet thermal oxides. The results of sequential isotope oxidations indicate that there is rapid exchange ofboth the hydrogen and oxygen species during transport of “water” to the SiO2. Si interface. We examine these results in terms of the concentrations of the interacting species in the oxide films, and our results are compared to similar reported studies.
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Mikkelsen, J.C. Secondary ion mass spectrometry characterization of D2O and H2 18O steam oxidation of silicon. J. Electron. Mater. 11, 541–558 (1982). https://doi.org/10.1007/BF02654688
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DOI: https://doi.org/10.1007/BF02654688