Abstract
The chalcopyrite alloy ZnxCd1−xSnP2 is a potentially use-ful electronic material. In addition to having effective masses lower than and energy gaps similar to its III-V compound analogs, this alloy can also be lattice matched to InP. We have used an open-tube, sliding-boat, liquid-phase system to grow ZnxCd1−xSnP2 epitaxially on InP sub-strates. Unintentionally-doped layers have electron con-centrations as high as 3 × 1019cm−3 with mobility values of about 2,000 cm2/V-sec. These mobility values are sub-stantially larger than have been obtained in the equivalent III-V materials at similar concentrations.
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Davis, G.A., Wolfe, C.M. Liquid phase epitaxial growth of ZnxCd1−xSnP2 on InP. J. Electron. Mater. 11, 505–516 (1982). https://doi.org/10.1007/BF02654686
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DOI: https://doi.org/10.1007/BF02654686