Abstract
The effects of induced disorder on the layered structure and luminescence properties of AlxGa1-xAs quantum-well heterostructures (QWH’s) grown at Ts = 750°C by metalorganic chemical vapor deposition (MO-CVD) are investigated. High-temperature thermal anneals in the range 1000–800°C > Ts result in the interdiffusion of Al and Ga and disordering of the QWH active region. Similar results are obtained at the much lower temperature 500–600°C < T8 by impurity (Zn) diffusion, which greatly enhances the Al-Ga interdiffusion process. It is also possible, by the use of a Si3N4 surface mask, to disorder selectively only certain portions of a QWH, thus leaving unchanged the as-grown quantum-well layered structure in the remaining areas. Lower-bandgap QWH’s can be dis ordered and changed into higher-bandgap material, including from direct gap to indirect gap
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References a) Department of Electrical Engineering
N. Holonyak,Jr., W. D. Laidig, B. A. Vojak, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, Phys. Rev. Lett.21, 1703 (1980).
J. J. Coleman, P. D. Dapkus, W. D. Laidig, B. A. Vojak, and N. Holonyak, Jr., Appl. Phys. Lett.38, 63 (1981).
B. A. Vojak, W. D. Laidig, N. Holonyak, Jr., M. D. Camras, J. J. Coleman, and P. D. Dapkus, J. Appl. Phys.52, 621 (1981).
L. L. Chang and A. Koma, Appl. Phys. Lett.29, 138 (1976).
W. D. Laidig, N. Holonyak, Jr., M. D. Camras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, Appl. Phys. Lett.38, 776 (1981).
R. M. Fleming, D. B. McWhan, A. C. Gossard, W. Wiegmann, and R. A. Logan, J. Appl. Phys.51, 357 (1980).
W. D. Laidig, N. Holonyak, Jr., M. D. Camras, B. A. Vojak, K. Hess, J. J. Coleman, and P. D. Dapkus, Solid State Commun.38, 301 (1981).
N. Holonyak, Jr., W. D. Laidig, M. D. Camras, J. J. Coleman, and P. D. Dapkus, Appl. Phys. Lett.39, 102 (1981).
H. M. Manasevit, J. Electrochem. Soc.118, 647 (1971).
R. D. Dupuls and P. D. Dapkus, 7th Intl. Symp. on GaAs and Related Compounds, St. Louis, 1978, ed. C. M. Wolfe (Institute of Physics, London, 1979), pp. 1–9.
Y. Yamamoto and H. Kanbe, Jpn. J. Appl. Phys.19, 191 (1980).
C. P. Less, S. Margalit, and A. Yariv, Solid-State Electron.21, 905 (1978).
A. Flat, A. G. Milnes, and D. L. Feucht, Solid-State Electron.20, 1024 (1977).
N. Holonyak, Jr., B. A. Vojak, R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus, Solid-State Electron.22, 431 (1979).
B. A. Vojak, N. Holonyak, Jr., W. D. Laidig, K. Hess, J. J. Coleman, and P. D. Dapkus, J. Appl. Phys.52, 959 (1981).
H. C. Casey, in ATOMIC DIFFUSION IN SEMICONDUCTORS, ed. D. Shaw (Plenum Press, N.Y., 1973), pp. 351–430.
J. J. Coleman, P. D. Dapkus, B. A. Vojak, W. D. Laidig, N. Holonyak, Jr., and K. Hess, Appl. Phys. Lett.37, 15 (1980).
N. Holonyak, Jr., B. A. Vojak, W. D. Laidig, K. Hess, J. J. Coleman, and P. D. Dapkus, Appl. Phys. Lett.37, 136 (1980).
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Laidig, W.D., Holonyak, N., Coleman, J.J. et al. Induced disorder of AlAs-AlGaAs-GaAs quantum-well heterostructures. J. Electron. Mater. 11, 1–20 (1982). https://doi.org/10.1007/BF02654605
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DOI: https://doi.org/10.1007/BF02654605