Abstract
A mathematical representation has been developed describing the velocity and concentration fields in a three-dimensional (3-D) horizontal chemical vapor deposition (CVD) reactor in the mass transfer-controlled regime. The theoretical predictions for the deposition rate were found to be in excellent agreement with measurements reported by Park and Chun. [17] A parametric study conducted examining the effects of the key process parameters has shown the following: the transport problems in horizontal CVD reactors are definitely 3-D; the concentration of the gaseous reactant at the inlet may have an important effect on the uniformity of the deposition rate; the imposition of a positive pressure gradient on the gas will improve the uniformity of the deposition rate; and the uniformity of the deposition rate may also be promoted by operating at a reduced pressure.
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Ilegbusi, O.J., Szekely, J. Three-dimensional transport phenomena in chemical vapor deposition equipment: A comparison of theoretical predictions with measurements and some concepts regarding equipment design. Metall Trans B 21, 753–760 (1990). https://doi.org/10.1007/BF02654254
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DOI: https://doi.org/10.1007/BF02654254