Abstract
Hillock formation was observed on (III) InSb grown by molecular beam epitaxy. The hillocks covered layers were examined by X-ray diffraction, Auger spectroscopy and ion channeling measurements and found to be of single phase growth and perfectly oriented with the substrates. The growth conditions to avoid the hillock formation were investigated and a model for the hillock formation is proposed. A growth rate hierarchy was determined from the shapes of the faceted hillocks.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
S. Baba, H. Horita, and A. Kinbara, Appl. Phys. Lett.49. 3632 (1978).
M. Yano, T. Takase, and M. Kimata, Phys. Stat.Sol. (a)54, 707 (1979).
K. Oe, S. Ando, and K. Sugiyama, Jpn. J. Appl. Phys.19, L417 (1980).
A. J. Noreika, M.H. Francombe and C.E.C. Wood, J. Appl. Phys.52, 12 (1981).
K. Sugiyama, Jour. Crystal Growth60, 450 (1982).
A.Y. Cho, M.B. Panish and I. Hayashi, 1970 Symp. on GaAs.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Ohashi, T., Wicks, G.W., Mukherjee, S. et al. Sb induced nucleation of InSb on (III) InSb substrates by molecular beam epitaxy. J. Electron. Mater. 14, 419–432 (1985). https://doi.org/10.1007/BF02654016
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02654016