Abstract
The effect of processing parameters on the crystal structure and electrical resistivity of magnetron sputter deposited tungsten thin films was investigated. Formation of body centered cubic (bcc) W was favored when the concentration of impurity oxygen atoms in the films was <5 at.% while the formation of A-15 W was favored between 6 and 10 at.% oxygen. A transition from A-15 W films to bcc W films occurred as the oxygen was removed from the deposition chamber by presputtering the target for extended periods of time. The binding energies of the W atoms in A-15 and bcc W films are similar, as is the binding energy of the O atoms in the two different crystal structures, indicating that the oxygen is not present as a tungsten oxide compound. The resistivity of A-15 W films is always higher than the resistivity of bcc W films due to the increased oxygen concentration and small grain size of the A-15 films. However, the sputter deposition pressure is found to have a greater effect on resistivity. This is attributed to the formation of cracks in the film.
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O’Keefe, M.J., Grant, J.T. & Solomon, J.S. Magnetron sputter deposition of A-15 and bcc crystal structure tungsten thin films. J. Electron. Mater. 24, 961–967 (1995). https://doi.org/10.1007/BF02652968
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DOI: https://doi.org/10.1007/BF02652968