Abstract
A new method of growing gallium phosphide on a silicon substrate is presented. The method includes an extra but simple process of depositing a thin phosphorus layer on a silicon substrate prior to the growth of gallium phosphide by a so-called halide transport method. Electronic and optical properties of the heterojunctions indicate that the interfaces between the gallium phosphide layers and silicon substrates had a higher quality than those previously reported.
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Katoda, T., Kishi, M. Heteroepitaxial growth of gallium phosphide on silicon. J. Electron. Mater. 9, 783–796 (1980). https://doi.org/10.1007/BF02652896
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DOI: https://doi.org/10.1007/BF02652896