Abstract
Single and double domain GaAs film growth on double domain Si(001) substrates by molecular beam epitaxy were observed. The domain structure of the film did not succeed to the domain structure of the substrate surface but was decided by a direction of slight misorientation of the substrate. To explain this, it has been proposed that the antiphase boundary (APB) of the film is dominantly non-stoichiometric,i.e., the APB is composed of the same polar {11n} or {nn1} (n = 1, 2, ….) planes of the adjacent domains. Growth simulation based on this model about the APB has explained well the experimental results that a double domain film can grow on a Si(001) surface which is exactly oriented or is misoriented towards a 〈100〉 direction.
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Kawanami, H., Hatayama, A. & Hayashi, Y. Antiphase boundary of GaAs films grown on Si(001) substrates by molecular beam epitaxy. J. Electron. Mater. 17, 341–349 (1988). https://doi.org/10.1007/BF02652116
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DOI: https://doi.org/10.1007/BF02652116