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Abruptp- type doping transitions using bis-(cyclopentadienyl)-magnesium in metal-organic vapor phase epitaxy of GaAs

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Abstract

Extremely abrupt p+-n doping transitions have been realized in GaAs and AlGaAs grown by metal-organic vapor phase epitaxy using bis-(cyclopentadienyl)-magnesium (Cp2Mg) as precursor for the Mg p-dopant. The Mg incorporation was found to depend linearly on the Cp2Mg concentration, in contrast to reports of a supralinear behaviour. Methods for eliminating reactor memory effects are described. Layers doped to about 1 x 1019 cm-3 and as thin as 100 nm at 10% of the peak doping have been grown under conditions compatible with growth of high quality Al0.3Ga0.7As. Atomic and carrier profiles of ap-plications for heterostructure bipolar transistor structures are presented.

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Authors and Affiliations

  1. Swedish Institute of Microelectronics, S-161 24 Kista, Box 1084, Sweden

    M. Rask, G. Landgren, S. G. Andersson & Å. Lundberg

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  1. M. Rask
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  2. G. Landgren
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  3. S. G. Andersson
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  4. Å. Lundberg
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Rask, M., Landgren, G., Andersson, S.G. et al. Abruptp- type doping transitions using bis-(cyclopentadienyl)-magnesium in metal-organic vapor phase epitaxy of GaAs. J. Electron. Mater. 17, 311–314 (1988). https://doi.org/10.1007/BF02652111

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  • DOI: https://doi.org/10.1007/BF02652111

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