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High temperature MOVPE growth of GaAs/AlGaAs device structures with tertiarybutylarsine

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Abstract

The performance characteristics of epitaxial structures suitable for optoelectronic and electronic devices were investigated. These were fabricated by MOVPE using tertiary-butylarsine, a non-hydride arsenic source. Minority carrier diffusion lengths of 5μm at 3 × 1018/cm3 and 2μm at 2 × 1019/cm3 were achieved inp-type GaAs. Recombination velocities at the GaAs/AlGaAs interface are reduced to 1 × 103 cm/sec by processing under appropriate conditions. Electron mobilities of 4000 cm2/V-sec inn-type (2 × 1017/cm3) layers resulted in transconductances of 120 mS/mm in 1.5μm gate depletion mode MESFETs. The above values are comparable to those obtained with arsine in this work and others reported in the literature.

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Authors and Affiliations

  1. American Cyanamid Company, Stamford Research Laboratories, 06904, Stamford, CT

    J. A. Baumann, C. Michel, H. Marek, H. B. Serreze & R. Schachter

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  1. J. A. Baumann
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  2. C. Michel
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  3. H. Marek
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  4. H. B. Serreze
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  5. R. Schachter
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Baumann, J.A., Michel, C., Marek, H. et al. High temperature MOVPE growth of GaAs/AlGaAs device structures with tertiarybutylarsine. J. Electron. Mater. 19, 363–366 (1990). https://doi.org/10.1007/BF02651298

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  • DOI: https://doi.org/10.1007/BF02651298

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