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Long wavelength GRIN-SCH MQW lasers incorporating graded GaAlInAs confinement layers

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Abstract

We report the growth and characterisation of the first GaAllnAs based GRIN-SCH MQW lasers operating at 1.3 and 1.6μm. In these devices, GaAllnAs barriers and either GalnAs or GaAllnAs wells have been used for the 1.6 and 1.3μm lasers, respectively, together with true continuously graded composition GaAlInAs regions for the confinement layers. The excellent structural quality of the active and confinement regions and control of wavelength uniformity has been confirmed. Buried ridge lasers fabricated from the GRIN-SCH MQW wafers lased at 1.3 and 1.6μm with CW threshold currents of 65 and 30 mA, respectively.

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Authors and Affiliations

  1. Plessey Research and Technology, Caswell, NN128EQ, Towcester, Northants, UK

    J. Thompson, R. M. Ash, N. Maung, A. J. Moseley & D. J. Robbins

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  1. J. Thompson
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  2. R. M. Ash
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  3. N. Maung
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  4. A. J. Moseley
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  5. D. J. Robbins
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Thompson, J., Ash, R.M., Maung, N. et al. Long wavelength GRIN-SCH MQW lasers incorporating graded GaAlInAs confinement layers. J. Electron. Mater. 19, 349–355 (1990). https://doi.org/10.1007/BF02651296

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  • DOI: https://doi.org/10.1007/BF02651296

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