Abstract
The structural and optical properties of GaInAs/InP multiquantum well (MQW) structures grown either continuously or with growth pauses has been studied. TEM, photoluminescence and absorption spectroscopy have shown that excellent quality MQWs are produced by both continuous or paused growths. Typical 10 K photoluminescence linewidths of 5–6 meV were obtained for 30 to 180 period structures. The reproducibility and uniformity of these MQW structures has also been demonstrated with wavelength variations of 8 nm recorded over full 2′ substrates. Optical modulators fabricated from these structures have shown contrast ratios up to 3.6 dB. The use of GaAlInAs/InP multi-layer structures as high reflectivity mirrors has been demonstrated for incorporation into high contrast ratio reflective modulators and surface emitting lasers.
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Thompson, J., Moseley, A.J., Kearley, M.Q. et al. The growth and characterization of InP-based multiquantum wells and multilayer structures. J. Electron. Mater. 19, 323–330 (1990). https://doi.org/10.1007/BF02651292
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DOI: https://doi.org/10.1007/BF02651292