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OMVPE growth of In0.53Ga0.47As on InP using tertiarybutylarsine

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Abstract

We have successfully grown bulk In0.53Ga0.47As on InP using tertiarybutylarsine (TBA), trimethylindium and trimethylgallium. The growth temperature was 602° and the V/III ratio ranged from 19 to 38. Net carrier concentrations were 2 – 4 × 1015 cm-3, n-type, with a peak 77 K mobility of 68,000 cm2/V. sec. Increasing compensation was observed in In0.53Ga0.47As grown at higher V/III ratios. PL spectra taken at 5 K revealed strong near bandgap emission at 0.81 eV—with the best sample having a FWHM of 2.5 meV. At lower energies, donor-acceptor pair transitions were evident. Strong and sharp 5 K PL emission was observed from InP/In0.53Ga0.47As/InP quantum wells grown with TBA.

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Authors and Affiliations

  1. Microwave Technology Division, Hewlett-Packard Company, 1412 Fountaingrove Parkway, 95403, Santa Rosa, CA

    F. G. Kellert & K. T. Chan

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  1. F. G. Kellert
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  2. K. T. Chan
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Kellert, F.G., Chan, K.T. OMVPE growth of In0.53Ga0.47As on InP using tertiarybutylarsine. J. Electron. Mater. 19, 311–315 (1990). https://doi.org/10.1007/BF02651290

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  • DOI: https://doi.org/10.1007/BF02651290

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