Abstract
The dynathermal current and capacitance responses of two isotopes of sulfur, 32s and 34s predeposited by low fluence ion implantation into siliconp +- n junction diodes are presented. As opposed to all previous studies, in this work unequal densities are seen for the shallow and deep sulfur defects, for both the 32s− and 34− related defects. Additionally, the dynathermal response of the deep 34s center is seen to exhibit a shift of 3 K from that of 32S at a fixed heating rate of 9.5 ±0.1 K/s, consistent with the isotope dependence of the thermal emission process observed earlier for these cen-ters by isothermal capacitance measurements.
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The work was conducted as part of the Semiconductor Technology Program at NBS. Portions of this work were supported by the Division of Electric Energy Systems, Department of Energy (Task Order A021-EES), the Defense Advanced Research Projects Agency (Order No. 2397), and the NBS. Not subject to copyright.
NBS-NRC Postdoctoral Research Associate.
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Myers, D.R., Phillips, W.E. Observation of unequal densities for sulfur defects in silicon predeposited by low fluence ion implantation*. J. Electron. Mater. 8, 781–788 (1979). https://doi.org/10.1007/BF02651185
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DOI: https://doi.org/10.1007/BF02651185