Abstract
Exposure to atomic hydrogen lowers the decomposition temperature of GaAs. Simultaneous exposure of GaAs to atomic hydrogen and atomic nitrogen above 500°C results in a layer rich in GaN. The degree of passivation was monitored by photoluminescence. A fourfold improvement in luminescence efficiency was obtained by nitridization, while a factor-of-ten improvement can be obtained with the more complicated technique of generating an (AlGa)As skin.
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This research was supported by the Air Force Office of Scientific Research under Contract No. F49620-80-C-0039.
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Pankove, J.I., Berkeyheiser, J.E., Kilpatrick, S.J. et al. Passivation of GaAs surfaces*. J. Electron. Mater. 12, 359–370 (1983). https://doi.org/10.1007/BF02651137
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DOI: https://doi.org/10.1007/BF02651137