Abstract
A modified contact resistance profiler has been used to determine the dopinq type of the active layer in GaAs/Ga AlAs double heterostructures qrown by low pressure metalorganic vanour phase enitaxy (LP-MO VPE). It was found that under normal growth conditions. The p/n junction is located inside the “p-tyne” Ga0.65Al0.35As confinement layer. SIMS data show that this displacement of the p/n junction is due to electrical compensation of the zinc doping.
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References
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Hersee, S.D., Baldy, M. & Duchemin, J.P. The variation of the P/N junction position in GaAs/GaAlAs double heterostructures grown by low pressure mo vpe.. J. Electron. Mater. 12, 345–357 (1983). https://doi.org/10.1007/BF02651136
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DOI: https://doi.org/10.1007/BF02651136