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Experimental examination of gaas dissolution in in-p melt

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Abstract

The “solubility” of GaAs crystals in quaternary In-Ga-As-P liquids (X IGa = X IAs ) has been studied experi-mentally at 770°C using seed-dissolution technique. The location of the true liquidus isotherm has been established independently by means of the direct vi-sual observation technique. Comparison between the two data sets indicates that the first method can be successfully used only for those In-Ga-As-P melt compositions which have the corresponding solid InxGa1-xAsyP1-y alloys nearly lattice-matched to the GaAs substrate. In other cases the results obtained by this method are totally misleading although in-teresting as they are. The phenomenon of “catastro-phic” substrate erosion is investigated. The results of the present study are interpreted within the conceptual framework developed previously.

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Authors and Affiliations

  1. Academy of Sciences of the USSR Siberian Branch, Institute of Semiconductor Physics, Novosibirsk,90, 630090, USSR

    Yu. B. Bolkhovityanov, R. I. Bolkhovityanova & S. I. Chikichev

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  1. Yu. B. Bolkhovityanov
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  2. R. I. Bolkhovityanova
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  3. S. I. Chikichev
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Bolkhovityanov, Y.B., Bolkhovityanova, R.I. & Chikichev, S.I. Experimental examination of gaas dissolution in in-p melt. J. Electron. Mater. 12, 525–549 (1983). https://doi.org/10.1007/BF02650862

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