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Plasma-Activated Sintering of Aluminum Nitride

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Abstract

The use of a new plasma- activated sintering (PAS) process to densify aluminum nitride (AIN) powders to nearly full theoretical density (97 to >99%) in 5 to 10 min was investigated. The process consists of a pulse activation step, followed by sintering at 1730 to 1800 °C using resistance heating in carbon dies. Submicron size (~0.44 μm) AIN powders of low oxygen content (<1 wt%) were consolidated to near full density in both air and vacuum with no sintering aids or binders. Transmission electron microscopy (TEM) examination revealed an equiaxed, submicron grain structure (~0.77 μm) with no apparent pores or intergranular phases. X- ray powder diffraction revealed no secondary crystalline phases.

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Authors and Affiliations

  1. Division of Materials Science and Engineering, Department of Chemical Engineering and Materials Science, University of California, Davis, 95616-5294, Davis, CA

    J. E. Hensley, S. H. Risbud & J. R. Groza

  2. Department of Mechanical, Aeronautical and Materials Engineering, University of California, Davis, 95616-5294, Davis, CA

    K. Yamazaki

Authors
  1. J. E. Hensley
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  2. S. H. Risbud
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  3. J. R. Groza
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  4. K. Yamazaki
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Hensley, J.E., Risbud, S.H., Groza, J.R. et al. Plasma-Activated Sintering of Aluminum Nitride. JMEP 2, 665–669 (1993). https://doi.org/10.1007/BF02650055

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  • DOI: https://doi.org/10.1007/BF02650055

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