Abstract
A method for generating the composition profiles of compound semiconductor multilayer structures while growth and composition dependent interdiffusion are simultaneously occurring is developed. The following composition dependent interdiffusion coefficient for HgCdTe was determined:
DHg 1-xCdx(μm2/sec) = 3.15 × 1010 · 103.53x · exp(−2.24 × 104/K)
Model profiles compare favorably with experimental profiles for HgCdTe multilayer structures prepared from 180° C to 550° C by VPE, LPE, MOCVD, and UHV methods. At high temperatures, the shape of the experimental profiles are determined by interdiffusion. Because at lower temperatures experimental data is characteristic of the profiling technique, model profiles are convoluted with the resolution of the measurement technique (i.e., scanning and sputter Auger and sputter XPS) to extract the actual profiles from the data.
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Zanio, K., Massopust, T. Interdiffusion in HgCdTe/CdTe Structures. J. Electron. Mater. 15, 103–109 (1986). https://doi.org/10.1007/BF02649911
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DOI: https://doi.org/10.1007/BF02649911