Abstract
Wire- to- post bonds of silicon transistors in hermetic TO type packages are reliably corrosion resistant. A field failure rate of 0.21 ppm is attributed to random, uncontrolled contaminants acting in conjunction with excessive moisture. An exhaustive effort to replicate such failures employing high temperature and humidity in the absence of deliberately introduced contaminants was unsuccessful.
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Drake, J., Beck, C. & Libby, R. Transistor bonding wire corrosion in type TO cans. JMEP 5, 39–45 (1996). https://doi.org/10.1007/BF02647267
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DOI: https://doi.org/10.1007/BF02647267