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Deformation and recrystallization textures in compressed polycrystalline silicon

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Abstract

Cylindrical samples of polycrystalline semiconductor-grade silicon have been compressed 30 pct at 1380°C at a rate of 0.08 s-1. The starting material had a strong «110» fiber texture, resulting from its growth by chemical vapor deposition; the fiber axis was perpendicular to the compression axis. The compression texture is very clearly defined after only 30 pct deformation, and has a «110» axis parallel to the compression axis and a «111» axis parallel to the original «110» fiber axis (perpendicular to the compression axis). Annealing for 10 min at 1380°C causes recrystallization. The recrystallization texture has a «100» axis parallel to the compression axis, and a «110» axis parallel to the original «110» fiber axis. Compression of a recrystallized sample gives the same deformation texture as does compression of the original material.

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Authors and Affiliations

  1. Department of Physics, The Technion, Haifa, Israel

    B. Pratt

  2. Chemical Corp., 48640, Morristown, NJ

    S. Kulkarni

  3. Department of Metallurgy and Materials Science, University of Pennsylvania, LRSM, Philadelphia, PA, 19104

    D. P. Pope & C. D. Graham

  4. Batelle Columbus Laboratories, 43201, Columbus, OH

    G. Noel

Authors
  1. B. Pratt
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  2. S. Kulkarni
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  3. D. P. Pope
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  4. C. D. Graham
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  5. G. Noel
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Additional information

S. KULKARNI, formerly with the Department of Metallurgy and Materials Science, University of Pennsylvania

G. NOEL, formerly with the Energy Center, University of Pennsylvania

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Pratt, B., Kulkarni, S., Pope, D.P. et al. Deformation and recrystallization textures in compressed polycrystalline silicon. Metall Trans A 8, 1799–1804 (1977). https://doi.org/10.1007/BF02646885

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  • DOI: https://doi.org/10.1007/BF02646885

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