Abstract
The optothermal properties of doped and undoped amorphous silicon- sulfur alloys have been studied using the optothermal transient emission radiometry (OTTER) technique. The optothermal decay signal was found to depend on the concentration of incorporated sulfur atoms in the material. The results have been correlated with the density of gap- state defects induced by sulfur atoms as determined from subgap absorption measurements. The OTTER technique has proved to be a viable alternative method for measuring the relative densities of defect states in the band gaps of amorphous silicon- sulfur alloys.
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References
A.C. Tarn and B. Sullivan, Remote Sensing Applications of Pulsed Photothermal Radiometry,Appl. Phys. Lett., Vol 43. 1983. p 333–335
E. Imhof, D.J.S. Birch, F.R. Thornely, J.R. Gilchrist, and T.A. Strivens. Optothermal Transient Emission Radiometry,J. Phys. E: Sci. lustrum., Vol 17. 1984. p 521–525
R.E. Imhof. D.J.S. Birch, F.R. Thornely, S.M. Al-Alawi, and J.R. Gilchrist. inThe Influence of New Technology in Medical Practice. J.P Paul. A.B. McCruden. and P.W. Schuetz. Ed., Macmillan. 1988
R.E. Imhof. C.J. Whitters, D.J.S. Birch, and F.R. Thornely. New Opto-Thermal Radiometry Technique Using Wavelength-Selection Detection,.J. Phys. E: Sci. lustrum.. Vol 21, 1988, p 115–117
R.E. Imhof, C.J. Whitters. and D.J.S. Birch, Time-Domain Opto- Thermal Spectro-Radiometry,Photoacoustic and Photothermal Phenomena II, J.C. Murphy, J.W. Maclachlan-Spicer, L. Aamodt. and B.S.H. Royce. Ed.. Springer-Verlag, Berlin, 1990, p 46–54
R.E. Imhof. F.R. Thornely, J.R. Gilchrist, and D.J.S. Birch. Opto- Thermal Study of the Melting Transition of Benzophenone.Appl. Phys. B, Vol 43, 1987, p 23–28
R.E. Imhof. C.W. Whitters. and D.J.S. Birch. Opto-Thermal In Vivo Monitoring of Structural Breakdown of an Emulsion Sunscreen on Skin.Clin. Mater. Vol 5. 1990. p 271–278
P.H. Wilson. R.E. Tmhof, D.J.S. Birch, and J.F. Webb. Opto-Ther- mal Investigation of Dichroic Materials,Photoaconstic and Pho- tot/iermal Phenomena II, J.C. Murphy. J.W. Maclachlan-Spicer, L. Aamodt. and B.S.H. Royce. Ed.. Springer-Verlag. Berlin, 1990. p 322–325
S.M. Al-Alawi. H. Hammam. S. Aljishi, H.S. Al-Alawi. and S. Al-Dallal, Novel Non-Stoichiometric Amorphous Silicon-Chalcogen Semiconductor Alloys,The Physics of Non-Crystal-line Solids, L.D. Pye, W.C. LaCourse, and H.J. Stevens, Ed.. Taylor & Francis. London, 1992, p 218
Z.E. Smith, V. Chu. K. Shepared. S. Aljishi. K. Kolodzey, T.L. Chu, and S. Wagner, Photothermal and Photoconductive Determination of Surface and Bulk Defect Densities in Amorphous Silicon Films,AppI. Phvs. Let!., Vol 50. 1987, p 1521
S.H. Baker, W.E. Spear, and R.A.G. Gibson, Electronic and Opti- cal Properties of a-Sit _ Films Prepared from a H2-diluted Mixture of SiH and CH4,Philos. Mag. B. Vol 62, 1990, p 213- 223
D.A. Anderson and W. Paul. Transport Properties of a-Si:H Al- loys by r.f. Sputtering.Philos. Mag. B, Vol 45. 1982. p 1–23
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Al-Alawi, S.M. Optothermal Study of Hydrogenated Amorphous Silicon- Sulfur Alloys. JMEP 3, 255–258 (1994). https://doi.org/10.1007/BF02645851
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DOI: https://doi.org/10.1007/BF02645851