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Diffusion creep by dislocation climb in beryllium and Be-Cu single crystals

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Abstract

High temperature creep of beryllium and Be-Cu alloy (10 wt pct Cu) single crystals com-pressed along the -c axis was shown to proceed by pure climb of -c dislocations (Burgers vector [0001]). Experimental results can be explained if we assume that -c dislocation loops grow in the basal planes. The activation energy for the climb of the -c dislocations is found to exceed the activation energy for self diffusion by 10 ±5 kcal/mole for both beryllium and Be-Cu. This leads us to think that thec dislocation climb rate is controlled by the processes of vacancy emission or absorption at jogs rather than by lattice diffusion.

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Authors and Affiliations

  1. Section de Recherches de Métallurgie Physique, Centre d’Etudes Nucléaires de Saclay, Gif sur Yvette, France

    Roger Le Hazif, Gerard Edelin & Jean Michel Dupouy

Authors
  1. Roger Le Hazif
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  2. Gerard Edelin
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  3. Jean Michel Dupouy
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Le Hazif, R., Edelin, G. & Dupouy, J.M. Diffusion creep by dislocation climb in beryllium and Be-Cu single crystals. Metall Trans 4, 1275–1281 (1973). https://doi.org/10.1007/BF02644522

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  • DOI: https://doi.org/10.1007/BF02644522

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