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Photoluminescence of doped multiple quantum wells of GaAs/Al x Ga1−x As at a high excitation level

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M. V. Lomonosov Moscow State University, Moscow, 119899, Vorob'yovy Gory, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 62, No. 3, pp. 138–144, May–June, 1995.

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Vardanyan, B.R., Yunovich, A.É. Photoluminescence of doped multiple quantum wells of GaAs/Al x Ga1−x As at a high excitation level. J Appl Spectrosc 62, 517–523 (1995). https://doi.org/10.1007/BF02606693

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  • DOI: https://doi.org/10.1007/BF02606693

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