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Trapping levels of carriers in thin-film electroluminescent structures based on ZnS

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Tartu University, 4, Tyakhe Str., Tartu, EE2400, Estonia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 63, No. 3, pp. 461–465, May–June, 1996.

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Vasil'chenko, V.P. Trapping levels of carriers in thin-film electroluminescent structures based on ZnS. J Appl Spectrosc 63, 384–387 (1996). https://doi.org/10.1007/BF02606603

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