References
D. H. Smith, J. Lumin.,23, 209 (1981).
V. P. Vasil'chenko, L. L. Matizen, and M. A. Voikhanskii, Uch. Zap. Tartu. Univ., No. 779, 22 (1987).
V. P. Vasil'chenko, L. L. Matizen, and M. A. Voikhanskii, Uch. Zap. Tartu. Univ., No. 779, 32 (1987).
T. V. Bitova, V. P. Vasil'chenko, and L. L. Matizen, Zh. Prikl. Spektr.,36, 500 (1982).
Physics and Chemistry of AIIBVI Compounds [in Russian], Moscow (1970), p. 440.
V. Marcello and A. Onton, Appl. Phys. Lett.,34, 525 (1979).
M. V. Fok, V. P. Vasil'chenko, L. L. Matizen, and M. A. Voikhanskii, Uch. Zap. Tartu. Univ., No. 867, 6 (1989).
H. Kozawaguchi and I. Ohwaki, Rev. Elec. Commun. Lab.,32, No. 1, 71 (1984).
V. P. Vasil'chenko and L. L. Matizen, Zh. Prikl. Spektr.,43, 953 (1985).
Additional information
Tartu University, 4, Tyakhe Str., Tartu, EE2400, Estonia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 63, No. 3, pp. 461–465, May–June, 1996.
Rights and permissions
About this article
Cite this article
Vasil'chenko, V.P. Trapping levels of carriers in thin-film electroluminescent structures based on ZnS. J Appl Spectrosc 63, 384–387 (1996). https://doi.org/10.1007/BF02606603
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02606603