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Influence of the initial temperature of silicon on crystallization of a layer melted by nanosecond laser heating

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Abstract

The effect of the initial temperature of silicon on the dynamics of phase transitions induced by nanosecond laser heating was studied on the basis of numerical solution of the Stefan problem.

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References

  1. J. M. Pout, G. Foti, and D. K. Jacobson (eds.), Modification and Alloying of Surfaces by Laser, Ion, and Electron Beams [Russian translation], Moscow (1987).

  2. R. F. Wood and G. E. Gules, Appl. Phys. Lett.,38, No. 6, 422–423 (1981).

    Article  Google Scholar 

  3. N. A. Gippius, T. A. Kuzemchenko, V. V. Klechkovskaya, et al. Poverkhnost'. Fiz. Khim. Mekh., No. 6, 32–36 (1988).

    Google Scholar 

  4. Yu. A. Manzhosov and G. A. Kachurin, Phys. Stat. Sol. (a),117, No. 1, K29-K32 (1990).

    Article  Google Scholar 

  5. Yu. A. Manzhosov, A. V. Dvurechenskii, and G. D. Ivlev, Pis'ma Zh. Tekh. Fiz.,17, No. 10, 58–63 (1991).

    Google Scholar 

  6. A. A. Samarskii and B. D. Moiseenko, Zh. Vychisl. Mat. Mat. Fiz.,5, No. 5, 816–827 (1965).

    MathSciNet  Google Scholar 

  7. A. R. Regel' and V. M. Glazev, Physical Properties of Electronic Melts [in Russian], Moscow (1980).

  8. A. E. Bell, RCA Review,40, No. 3, 295–338 (1979).

    Google Scholar 

  9. M. Toulemonde, S. Unamuno, R. Heddache, et al., Appl. Phys. A,36, No. 1, 31–36 (1985).

    Article  Google Scholar 

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Additional information

Institute of Electronics of the Academy of Sciences of Belarus, Minsk. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 69, No. 5, pp. 790–793, September–October, 1996.

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Zhvavyi, S.P., Ivlev, G.D. Influence of the initial temperature of silicon on crystallization of a layer melted by nanosecond laser heating. J Eng Phys Thermophys 69, 608–611 (1996). https://doi.org/10.1007/BF02606177

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  • DOI: https://doi.org/10.1007/BF02606177

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