Abstract
The effect of the initial temperature of silicon on the dynamics of phase transitions induced by nanosecond laser heating was studied on the basis of numerical solution of the Stefan problem.
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Institute of Electronics of the Academy of Sciences of Belarus, Minsk. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 69, No. 5, pp. 790–793, September–October, 1996.
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Zhvavyi, S.P., Ivlev, G.D. Influence of the initial temperature of silicon on crystallization of a layer melted by nanosecond laser heating. J Eng Phys Thermophys 69, 608–611 (1996). https://doi.org/10.1007/BF02606177
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DOI: https://doi.org/10.1007/BF02606177