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The deposition of aluminide and silicide coatings on γ-TiAl using the halide-activated pack cementation method

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Abstract

The halide-activated pack cementation method (HAPC) was utilized to deposit aluminide and silicide coatings on nominally stoichiometric γ-TiAl. The deposition temperature was 1000°C and deposition times ranged from 2 to 12 hours. The growth rates of the coatings were diffusion controlled, with the rate of aluminide growth being about a factor of 2 greater than that of silicide growth. The aluminide coating was inward growing and consisted of a thick, uniform outer layer of TiAl3 and a thin inner layer of TiAl2, with the rate-controlling step being the diffusion of aluminum from the pack into the substrate. Annealing experiments at 1100 °C showed that the interdiffusion between the aluminide coating and the γ-TiAl substrate was rapid. In contrast to the aluminide coating, the silicide coating was nonuniform and porous, consisting primarily of TiSi2, TiSi, and Ti5Si4, with the rate-controlling step for the coating growth believed to be the diffusion of aluminum into the γ-TiAl ahead of the silicide/γ-TiAl interface. The microstructural evolution of the aluminide and silicide coating structures is discussed qualitatively.

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Authors and Affiliations

  1. the School of Materials Science and Engineering, The University of New South Wales, 2052, Sydney, NSW, Australia

    T. C. Munro (Postgraduate Student) & B. Gleeson (Senior Lecturer)

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  1. T. C. Munro
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  2. B. Gleeson
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Munro, T.C., Gleeson, B. The deposition of aluminide and silicide coatings on γ-TiAl using the halide-activated pack cementation method. Metall Mater Trans A 27, 3761–3772 (1996). https://doi.org/10.1007/BF02595625

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  • DOI: https://doi.org/10.1007/BF02595625

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