Abstract
The discovery of superconductivity with critical temperatures of ∼100 K opens new opportunities for wide-scale application of superconducting microelectronics devices with ultraminiature elements (less than 0.1 µm). Projection x-ray lithography could serve as a technological basis of such microelectronics. It is demonstrated that application of x-ray optics elements, production of which can be readily provided by modern technological facilities, makes it possible to produce microstructures with element dimensions of the order of tens of nanometers and to eliminate to a considerable extent the drawbacks inherent in contact lithography.
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References
K. A. Valiev and A. V. Rakov,Physical Fondations of Submicron Lithography in Microelectronics [in Russian], Radio i Svyaz’, Moscow (1984).
I. M. Glazkov and Ya. A. Raikhman,Image Generators in IC Production [in Russian], Nauka i Tekhnika, Minsk (1981).
W. M. Moreau,Semiconductor Lithography: Principles, Practices, and Materials, Plenum Press, New York (1988).
H. G. Craighead, R. E. Howard, L. D. Jackel, and P. M. Mankiewich,Appl. Phys. Lett.,42, 38 (1983).
J. R. Hughes and P. K. Fink,Élektronika,51, No. 23, 26 (1978).
D. Maydan, G. A. Coquin, J. R. Maldonaldo, et al.,IEEE Trans.,ED-22, 429 (1975).
V. V. Aristov, C. V. Kopetsky, G. I. Kokhanchik, and V. A. Kudryashov,Poverkhn.: Fiz., Khim., Mekh., No. 11, 5 (1983).
J. H. Underwood,Opt. News, No. 3, 20 (1986).
P. Lee, R. J. Bartlett, and D. R. Kania,Opt. Eng.,24, 197 (1985).
N. Seglio, in: G. Schmahl and D. Rudolph (eds.),X-Ray Microscopy, Springer Verlag, Berlin (1984).
A. Franks and B. Gahle, in: G. Schmahl and D. Rudolph (eds.),X-Ray Microscopy, Springer Verlag, Berlin (1984).
A. V. Vinogradov and I. V. Kozhevnikov,Angular, Dispersion, and Polarization Properties of Multilayer Mirrors of the Soft X-Ray Region, Preprint of the Lebedev Physical Institute, No. 102, Moscow (1986).
Yu. V. Gulyaev, V. B. Sandomirsky, A. A. Sukhanov, and Yu. Ya. Tkach,Usp. Fiz. Nauk,144, 475 (1984).
K. K. Likharev (ed.), “Cryoelectronics,”Zarubezhnaya Élektronika, No. 6 (1983).
M. K. Wu, J. R. Ashburn, C. I. Torng, et al.,Phys. Rev. Lett.,58, 908 (1987).
A. V. Vinogradov and N. N. Zorev,Projection X-Ray Lithography, Preprint of the Lebedev Physical Institute, No. 104, Moscow (1987).
G. Schmahl and D. Rudolph (eds.),X-Ray Microscopy, Springer Verlag, Berlin (1984).
M. Born and E. Wolf,Principles of Optics, Pergamon Press, Oxford (1968).
N. V. Grevtsev, A. A. Krivospitsky, and Yu. F. Syomin,Élektron. Promysh., No. 5, 36 (1980).
V. A. Veretennikov, O. G. Semenov, A. N. Dolgov, et al.,Poverkhn.: Fiz., Khim., Mekh., No. 1, 115 (1984).
V. P. Lavrishchev,Élektron. Promysh., No. 5, 10 (1980).
A. A. D’yachenko, I. A. Kadomsky, É. M. Kolesnik, and R. K. Faizullin,Élektron. Promysh., No. 5, 34 (1980).
V. S. Korsakov, A. A. Krivospitsky, V. A. Kudryavtsev, et al.,Élektron. Tekh., Ser. 3, Mikroélektronika, No. 5, 19 (1978).
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Translated from Trudy Fizicheskogo Instituta im. P. N. Lebedeva (Proceedings of the Lebedev Physical Institute, Russian Academy of Sciences, Moscow), Vol. 196, pp. 130–142, 1989.
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Zorev, N.N. Outlook for projection x-ray lithography. J Russ Laser Res 16, 551–567 (1995). https://doi.org/10.1007/BF02581036
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DOI: https://doi.org/10.1007/BF02581036