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Effect of an ac electric field on weak electron localization in Bi films

  • Electrons in 2D and Weak Localization
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Czechoslovak Journal of Physics Aims and scope

Abstract

We have studied the effects of weak localization and electron-electron interaction in conductivity of Bi films at temperatures between 1.1 and 4.2 K in high-frequency electric field (≅9.4 GHz). The experiments are carried out under conditions of no appreciable overheating of electrons due to microwave radiation. The data obtained permit to examine the influence of temperature on quantum corrections Δσ(ω) in high-frequency electric field more comprehensively and reliably than in earlier works. The experimental dependences Δσ(ω,T) are found to be in good agreement with the known theoretical models.

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Authors and Affiliations

  1. B. I. Verkin Institute for Low Temperature Physics & Engineering, Nat. Acad. of Sci. of Ukraine, 47 Lenin Prosp., 310164, Kharkov, Ukraine

    Boris I. Belevtsev, Aleksey S. Anopchenko & Evgeniy Yu. Beliayev

  2. Physikalisches Institut, Universität Karlsruhe, Engesserstr. 7, 76128, Karlsruhe, Germany

    Jörg Hasse

Authors
  1. Boris I. Belevtsev
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  2. Jörg Hasse
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  3. Aleksey S. Anopchenko
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  4. Evgeniy Yu. Beliayev
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Belevtsev, B.I., Hasse, J., Anopchenko, A.S. et al. Effect of an ac electric field on weak electron localization in Bi films. Czech J Phys 46 (Suppl 5), 2483–2484 (1996). https://doi.org/10.1007/BF02570228

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  • DOI: https://doi.org/10.1007/BF02570228

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