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Percolative transition in carbon-ion implanted type IIa diamond

  • Metal-insulator Transition and Localization
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Czechoslovak Journal of Physics Aims and scope

Abstract

Experimental data for the conductivity of type IIa diamond specimens implanted at low temperatures with carbon ions, followed by high temperature annealing, have been analyzed using hopping and percolation theories in the vicinity of the insulator-metal transition. Near the transition it appears that conductivity occurs viasp 2-bonded graphitic clusters which are randomly distributed in thesp 3-bonded diamond matrix. A conductivity crossover between the Mott and Efros-Shklovskii VRH laws has been observed on the insulating side of the transition.

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Authors and Affiliations

  1. Department of Physics and Condensed Matter Physics Research Unit, University of the Witwatersrand, P.O. WITS, 2050, South Africa

    Tshakane Tshepe & Michael J. R. Hoch

  2. Schonland Research Centre for Nuclear Sciences, University of the Witwatersrand, P.O. WITS, 2050, South Africa

    Johan F. Prins

Authors
  1. Tshakane Tshepe
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  2. Johan F. Prins
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  3. Michael J. R. Hoch
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Tshepe, T., Prins, J.F. & Hoch, M.J.R. Percolative transition in carbon-ion implanted type IIa diamond. Czech J Phys 46 (Suppl 5), 2441–2442 (1996). https://doi.org/10.1007/BF02570207

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  • DOI: https://doi.org/10.1007/BF02570207

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