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OH-related capacitance-voltage recovery effect in MOS capacitors passivated by PbO-B2O3-SiO2-GeO2 glasses Part V The effects of B2O3 content

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Journal of Materials Science Letters

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  1. Toshiba ULSI Research and Development Center, 1-Komukai Toshiba-cho, Kawasaki, Japan

    K. Kobayashi

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  1. K. Kobayashi
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Kobayashi, K. OH-related capacitance-voltage recovery effect in MOS capacitors passivated by PbO-B2O3-SiO2-GeO2 glasses Part V The effects of B2O3 content. J Mater Sci Lett 14, 6–8 (1995). https://doi.org/10.1007/BF02565268

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  • DOI: https://doi.org/10.1007/BF02565268

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