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Analysis of thermal behaviour of high power semiconductor laser arrays by means of the finite element method (FEM)

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Abstract

New results of steady-state two-dimensional finite-element computations of temperature distributions of high power semiconductor laser arrays are presented. The influence of different thermal loads on the 2D temperature distribution in AlGaAs/GaAs gain-guided laser arrays is investigated. TheFEM model is tested by comparing it with analytical solutions. For numerical convenience, the latter is rewritten in a novel form, which is free of overflow problems. The maximum temperatures calculated by both methods agree within 1%. Several factors determining the thermal resistance of the device are quantitatively examined: the ratio of light emitting to non-emitting areas along the active zone, the amount of Joule losses, the current spreading, the solder thickness, and voids in the solder. This yields design rules for optimum thermal performance.

Zusammenfassung

Neue Ergebnisse von stationären 2-dimensionalen Temperaturberechnungen mittelsFEM in Hochleistungslaserdiodenarrays werden vorgestellt. Der Einfluß verschiedener thermischer Lasten auf die Temperaturverteilung in AlGaAs/GaAs gewinngeführten Laserarrays wird untersucht. DasFEM-Modell wird mit einem analytischen Modell verglichen. Die mit diesen Modellen berechneten Maximaltemperaturen stimmen auf 1% überein. Der quatitative Einfluß verschiedener Größen (Verhältnis der emittierenden zu nichtemittierenden Gebieten, Joulesche Wärme, Stromspreizung, Lotschichten sowie nichtbenetzte Bereiche), die den thermischen Wiederstand des Bauelements beeinflussen, wird untersucht. Aus den Ergebnissen werden Regeln für einen optimalen thermischen Aufbau abgeleitet.

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Bärwolff, A., Puchert, R., Enders, P. et al. Analysis of thermal behaviour of high power semiconductor laser arrays by means of the finite element method (FEM). Journal of Thermal Analysis 45, 417–436 (1995). https://doi.org/10.1007/BF02548775

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