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Novel growth methods of optoelectronic crystals based on antimonides

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Abstract

This work contributes to the growth of bulk crystals where crystals are grown from a molten-solution zone (MSZ). Our original modifications ofTHM have been used for a crystallization of GaSb and of (Ga.In)Sb—the ternary Solid Solution (TSS). The crystallization process has been accelerated with a low frequency and low energy vibrational stirring (VS). Lately, the stirring has been combined with the magneto-hydrodynamical stirring (MHD-S) and applied on GaSb. The lattice parameter ‘a’ ofTSS crystals has been constant throughout the significant part of the ingot length. This approach has permitted the growth of these crystalline ingots with ‘a’ apriori chosen and calculated—having the deviation from its constancy less than 0.03% (0.2 pm) with a 75 mm length. Crystals can have a mosaic structure at this stage.

Zusammenfassung

Vorliegende Arbeit ist ein Beitrag zur Züchtung von Vollkristallen, wobei die Kristalle aus einer Schmelzen-Lösungszone (MSZ) gezüchtet werden. Unsere ursprünglichen Modifikationen vonTHM wurden zur Kristallisation von GaSb und der ternären festen Lösung (TSS) von (Ba.In)Sb benutzt. Der Kristallisationsprozeß wurde durch Vibrationsrühren niedriger Frequenz und Energie (VS) beschleunigt. In letzter Zeit wurde dieses Rühren mit magneto-hydrodynamischem Rühren (MHD-S) kombiniert und an GaSb angewendet. Der Gitterparameter ‘a’ desTSS-Kristalles war über den signifikanten Teil der Blocklänge konstant. Diese Methode ermöglichte die Züchtung dieser Kristallblöcke mit vorgegebenem bzw. vorberechnetem ‘a’ mit einer Abweichung von weniger als 0.03 % (0.2 pm) von seiner Konstantheit über die Länge von 75 mm. Kristalle in diesem Stadium können eine Mosaikstruktur besitzen.

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Authors and Affiliations

  1. Fac. of Electrical Engineering, Department of Mechanics and Materials Science, Department of Electromagnetic Field and Department of Electrotechnology, CTU-Prague, Technická 2, 16627, Praha 6, Czech Republic

    J. J. Venkrbec, J. Kousal, J. Štětina, J. Fiksa & V. Papež

  2. Inst. of Radio Engineering and Electronics, Czech Academy of Sciences, Prague, Czech Republic

    V. Rosická & J. Kohout

  3. Inst. for Nuclear Research, Czech Academy of Sciences, Prague, Czech Republic

    V. Knobloch

  4. Inst. of Solid State Engineering, Prague Inst. of Chemical Technology, Prague, Czech Republic

    J. Leitner

Authors
  1. J. J. Venkrbec
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  2. J. Kousal
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  3. J. Štětina
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  4. J. Fiksa
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  5. V. Papež
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  6. V. Rosická
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  7. V. Knobloch
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  8. J. Leitner
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  9. J. Kohout
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Venkrbec, J.J., Kousal, J., Štětina, J. et al. Novel growth methods of optoelectronic crystals based on antimonides. Journal of Thermal Analysis 43, 399–410 (1995). https://doi.org/10.1007/BF02546827

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