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Copper solubility and distribution in doped GaSb single crystals

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Abstract

For the GaSb single crystals doped with copper (grown using the Czochralski method without encapsulant in flowing atmosphere of hydrogen) the distribution coefficient of copper in GaSb,k eff=0.0021±0.0006 was found and the copper solubility in GaSb was discussed. The region of copper solubility in GaSb was analyzed on the thermodynamic basis using chemical phase diagram in the Sb−Ga−Cu system. Due to a rather low solubility of copper, its excessive amount in GaSb caused probably an increase of the dislocation density at the end of the GaSb single crystals.

Zusammenfassung

Für mit Kupfer versetzte GaSb-Einkristalle (gezüchtet nach der Czochralski Methode ohne Einbettung in dynamischer Wasserstoffatmosphäre) wurde der Verteilungskoeffizient für Kupfer in GaSb mitk eff=0.00210.0006 ermittelt und die Löslichkeit von Kupfer in GaSb diskutiert. Mittels chemischen Phasendiagrammen des Systemes Sb−Ga−Cu wurde auf thermodynamischer Grundlage der Bereich der Kupferlöslichkeit im GaSb System analysiert. Wegen der eher geringen Löslichkeit von Kupfer verursacht seine Überschußmenge in GaSb ein Ansteigen der Versetzungsdichte am Ende von GaSb-Einkristallen.

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Authors and Affiliations

  1. Institute of Physics, Semiconductor Department, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 00, Prague 6, Czech Republic

    J. Šesták, B. Štěpánek & V. Šestáková

  2. Department of Inorganic Materials, National Institute of Materials and Chemical Research, 305, Tsukuba, Ibaraki, Japan

    H. Yokokawa

Authors
  1. J. Šesták
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  2. B. Štěpánek
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  3. H. Yokokawa
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  4. V. Šestáková
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Šesták, J., Štěpánek, B., Yokokawa, H. et al. Copper solubility and distribution in doped GaSb single crystals. Journal of Thermal Analysis 43, 389–397 (1995). https://doi.org/10.1007/BF02546826

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