Abstract
A neutron activation method for the determination of chlorine distribution in silicon dioxide on the surface of Si wafers has been developed. After irradiation of the sample with a standard, successive layers are removed from the oxide surface by chemical etching and the chlorine content in the solutions obtained is determined gamma-spectrometrically. Using a Ge(Li) detector, a lower limit of determination of 1.0·10−7 g was obtained. This limit can be improved by using a NaI(Tl) detector. The error of chlorine determination is discussed.
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Rowińska, L., Jaskólska, H., Wroński, W. et al. Determination of chlorine distribution in silicon dioxide by neutron activation. J. Radioanal. Chem. 58, 189–194 (1980). https://doi.org/10.1007/BF02533787
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DOI: https://doi.org/10.1007/BF02533787