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Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers

  • Physical Methods Section
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Abstract

Oxygen in silicon nitride films on silicon wafers was analyzed by activation with the16O(3He, p)18F reaction. By3He bombardment of samples propertly arranged under consideration of the18F recoil effect, total oxygen was reliably determined and its predominant part was estimated to be located whether on film surface, in film interior, or on film-substrate interface. Sample films with 0.1 to 2 μm thicknesses were found to contain 0.2 to 2 μg/cm2 of oxygen in locations varying with preparation conditions. This method has been compared with ESCA and other methods for surface analysis.

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References

  1. A. K. SINHA, H. J. LEVINSTEIN, T. E. SMITH, G. QUINTANA, S. E. HASZKO, J. Electrochem. Soc., 125 (1978) 601.

    Article  CAS  Google Scholar 

  2. D. DONG, E. A. IRENE, D. R. YOUNG, J. Electrochem. Soc., 125 (1978) 819.

    Article  CAS  Google Scholar 

  3. T. INADA, T. OHKUBO, S. SAWADA, J. Electrochem. Soc., 125 (1978) 1525.

    Article  CAS  Google Scholar 

  4. R. GINSBURGH, D. L. HEALD, R. C. NEVILLE, J. Electrochem. Soc., 125 (1978) 1557.

    Article  CAS  Google Scholar 

  5. D. HACKLEMAN, Y. G. VLASOV, R. P. BUCK, J. Electrochem. Soc., 125 (1978) 1875.

    Article  CAS  Google Scholar 

  6. E. A. TAFT, J. Electrochem. Soc., 118 (1971) 1341.

    CAS  Google Scholar 

  7. P. H. HALLOWAY, H. J. STEIN, J. Electrochem. Soc., 123 (1976) 723.

    Article  Google Scholar 

  8. E. g., Quantitative Surface Analysis of Materials, ASTM Special Technical Publication (in press).

  9. T. NOZAKI, M. IWAMOTO, T. IDO, Int. J. Appl. Radiation Isotopes, 25 (1974) 393.

    Article  CAS  Google Scholar 

  10. E. g., I. M. KOLTHOFF, P. J. ELVING, Treatise on Analytical Chemistry, Part II, Vol. 2, Interscience, New York, 1962, p. 164.

    Google Scholar 

  11. Y. YATSURUGI, N. AKIYAMA, Y. ENDO, T. NOZAKI, J. Electrochem. Soc., 120 (1973) 975.

    CAS  Google Scholar 

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Authors and Affiliations

  1. Institute of Physical and Chemical Research, Wakôshi, 351, Saitama, (Japan)

    T. Nozaki & M. Iwamoto

  2. Central Research Laboratory, Hitachi Ltd., Kobubunji, 185, Tokyo, (Japan)

    K. Usami, K. Mukai & A. Hiraiwa

Authors
  1. T. Nozaki
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  2. M. Iwamoto
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  3. K. Usami
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  4. K. Mukai
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  5. A. Hiraiwa
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Nozaki, T., Iwamoto, M., Usami, K. et al. Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers. J. Radioanal. Chem. 52, 449–459 (1979). https://doi.org/10.1007/BF02521296

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  • DOI: https://doi.org/10.1007/BF02521296

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