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The use of secondary ionic emission and nuclear reactions to determine the parameters in the manufacture of a planar transistor

  • Analysis by Charged Particle Nuclear Reactions
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Abstract

Several microanalytical problems arising in the study of the manufacture of a planar bipolar transistor are solved using the techniques of nuclear reactions and secondary ionic emission analysis. The results obtained permit a comparison of the possibilities of the two methods.

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References

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Authors and Affiliations

  1. Laboratoire d'Electronique et de Technologie de l'Informatique, LETI

    J. Monnier & J. B. Quoirin

  2. Département de Chimie Appliquée, C.E.N., Grenoble, France

    H. Hilleret

  3. Département de Recherche Fondamentale, C.E.N., Grenoble, France

    E. Ligeon

Authors
  1. J. Monnier
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  2. H. Hilleret
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  3. E. Ligeon
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  4. J. B. Quoirin
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Monnier, J., Hilleret, H., Ligeon, E. et al. The use of secondary ionic emission and nuclear reactions to determine the parameters in the manufacture of a planar transistor. J. Radioanal. Chem. 12, 353–366 (1972). https://doi.org/10.1007/BF02521001

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  • DOI: https://doi.org/10.1007/BF02521001

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