Abstract
The determination of impurities in semiconductor silicon by nondestructive and destructive NAA is described. To improve the detection limit, a multiple beta—single gamma detector assembly is used. It is shown that24Na is also produced from silicon by a (n, αp) reaction with reactor neutrons. The cross-section with fission neutrons is 1.8·10−9 barn.
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Niese, S. Neutron activation analysis of semiconductor silicon. J. Radioanal. Chem. 38, 37–41 (1977). https://doi.org/10.1007/BF02520181
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DOI: https://doi.org/10.1007/BF02520181