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Modification of the chemical properties of silicon by ion implantation with high doses of Ar and P

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Abstract

The behaviour of Si implanted with high doses of P and Ar (5·1014 to 1017 cm−2) in HF solutions was investigated using radioactive isotopes. The reaction products were analyzed by ion exchange and electrochemical polarization. An increased dissolution was found and a possible reaction mechanism given.

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Authors and Affiliations

  1. Central Institute of Nuclear Research, Academy of Sciences, Rossendorf, GDR

    R. Ross & M. T. Pham

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  1. R. Ross
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  2. M. T. Pham
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Ross, R., Pham, M.T. Modification of the chemical properties of silicon by ion implantation with high doses of Ar and P. J. Radioanal. Chem. 50, 45–52 (1979). https://doi.org/10.1007/BF02519940

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  • DOI: https://doi.org/10.1007/BF02519940

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