Abstract
High utility value of charged-particle activation analysis is exemplified by the study on carbon, nitrogen and oxygen in semiconductor silicon. A summary of the present authors' works is shown, and the equilibrium of carbon and oxygen in a silicon melt with ambient carbon monoxide is discussed. Also, a note is given about the chemical separation of18F for the3He activation analysis of various matrices.
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Nozaki, T., Yatsurugi, Y. & Endo, Y. Charged-particle activation analysis studies on carbon, nitrogen and oxygen mainly in semiconductor silicon. J. Radioanal. Chem. 32, 43–50 (1976). https://doi.org/10.1007/BF02517739
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DOI: https://doi.org/10.1007/BF02517739